6 results
Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.32.1
- Print publication:
- 2001
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Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient
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- Journal:
- MRS Online Proceedings Library Archive / Volume 525 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 237
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- 1998
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Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 219
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- 1998
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Modeling of the Surface Annihilation of Excess Self-Interstitials Generated by Gold Diffusion into Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 490 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 111
- Print publication:
- 1997
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Point Defect Supersaturation During Zinc Diffusion into InP
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 183
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- 1995
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The Influence of Dislocations on the Diffusion Behavior of Gold in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 36 / 1984
- Published online by Cambridge University Press:
- 21 February 2011, 137
- Print publication:
- 1984
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